Unclassified, distribution unlimited MULTICOLOR QUANTUM WELL INFRARED PHOTODETECTORS

نویسنده

  • Meimei Z. Tidrow
چکیده

Multicolor infrared (IR) detectors are very important to advanced IR sensor systems. An IR detector with multicolor capability can offer a better target discrimination, tracking, and identification, as well as temperature determination. Multicolor IR sensors are also very useful in industry for gas leakage detection, chemical analysis, and for environmental sensing and control. As the IR technology continues to advance, there is a growing demand of multicolor IR detectors for advanced IR sensor systems. Quantum well infrared photodetector (QWIP) is one of the competing technologies that shows very promising potential in infrared detection and imaging. One major advantage of QWIPs is its multicolor detection capability and voltage tunability. Several approaches of achieving multicolor detection, detailed device structures, and performance of multicolor QWIPs will be presented. The multicolor voltage tunability, simultaneous detection capability, nd the Stark Shift effect for fine tuning of the peak etection wavelength will be discussed.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Design and analysis of a multicolor quantum well infrared photodetector

Public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instruction, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including s...

متن کامل

Modeling of High Temperature GaN Quantum Dot Infrared Photodetectors

In this paper, we present calculations for different parameters of quantum dot infrared photodetectors. We considered a structure which includes quantum dots with large conduction-band-offset materials (GaN/AlGaN). Single band effective mass approximation has been applied in order to calculate the electronic structure. Throughout the modeling, we tried to consider the limiting factors which dec...

متن کامل

Multi-stack InAs/InGaAs sub-monolayer quantum dots infrared photodetectors

Related Articles GaN/AlGaN waveguide quantum cascade photodetectors at λ ≈ 1.55μm with enhanced responsivity and 40GHz frequency bandwidth Appl. Phys. Lett. 102, 011135 (2013) Optimization of thickness and doping of heterojunction unipolar barrier layer for dark current suppression in long wavelength strain layer superlattice infrared detectors Appl. Phys. Lett. 102, 013509 (2013) Metal-semicon...

متن کامل

Arbitrary Multicolor Photodetection by Hetero-integrated Semiconductor Nanostructures

The typical photodetectors can only detect one specific optical spectral band, such as InGaAs and graphene-PbS quantum dots for near-infrared (NIR) light detection, CdS and Si for visible light detection, and ZnO and III-nitrides for UV light detection. So far, none of the developed photodetector can achieve the multicolor detection with arbitrary spectral selectivity, high sensitivity, high sp...

متن کامل

QWIP and MCT for Long Wavelength and Multicolor Focal Plane Array Applications

Infrared (IR) sensor technology is critical to all phases of ballistic missile defense. Traditionally, material systems such as indium antimonide (InSb), platinum silicide (PtSi), mercury cadmium telluride (MCT), and arsenic doped silicon (Si: As) have dominated IR detection. Improvement in surveillance sensors and interceptor seekers requires large, highly uniform, and multicolor (or multispec...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 1998